SRAM((Static Random Access Memory)is also called static random access memory.As long as the power is kept on,the data stored in SRAM can be permanently stored,but once the power is cut off,the stored data will disappear,so it belongs to volatile memory.HBM(High Bandwidth Memory)is a high-bandwidth memory,and it is an advanced DRAM.Through 3D stacking+silicon via(TSV)technology,multi-layer memories are stacked together,and then connected with logic chips by ultra-wide bus.

 

　　The advantages of SRAM are high speed,low delay and stable storage without refreshing data.Compared with DRAM,the power consumption is low,which is suitable for the application requirements of high-speed short-term storage.Disadvantages are large area and high cost,which are not suitable for large-capacity storage requirements.

 

　　The advantage of HBM is its high bandwidth.Compared with the traditional DRAM memory,the power of HBM is lower and the capacity is much larger than that of SRAM.The delay of HBM will be lower than that of traditional DRAM,but higher than that of SRAM.The disadvantage is that the manufacturing process of HBM is difficult and the cost is relatively higher.HBM is suitable for efficient and high-speed storage of computing core devices,such as AI GPU,AI training,inference accelerator,etc.

 

　　In short,what type of memory is needed should be selected according to individual application needs.As a well-known supplier of electronic components and storage solutions,Yingshang can provide rich product selection and selection scheme design.If you need it,please feel free to call.